维安WMO20N06T1 60V 20A
上海维安半导体推出超结650V MOSFET，超结高压MOS管找华芯旺维安代理
Description WMO20N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
⚫ VDS= 60V, ID = 20A
RDS(on) < 46mΩ @ VGS = 10V
RDS(on) < 52mΩ @ VGS = 4.5V
⚫ Green Device Available
⚫ Low Gate Charge
⚫ Advanced High Cell Density Trench Technology
⚫ 100% EAS Guaranteed Applications
⚫ Power Management Switches
⚫ DC/DC Converters Absolute Maximum Ratings
